Diodes Incorporated - ZXTP2012ASTZ

  1. Home
  2. Diodes Incorporated - ZXTP2012ASTZ
ZXTP2012ASTZ by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXTP2012ASTZ
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 3.5 A; Package Style (Meter): IN-LINE;
Datasheet ZXTP2012ASTZ Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 120 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 10
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-W3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: WIRE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2907A by Texas Instruments

2N2907A

Texas Instruments

2N2907A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.4W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on time (45ns) and high transition frequency (200MHz).
2N2905A by Raytheon Semiconductor

2N2905A

Raytheon Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC547CTFR by Onsemi

BC547CTFR

Onsemi

BC547CTFR by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, min. DC current gain of 420, and max. power dissipation of 0.625W. It is commonly used for switching applications due to its single configuration and cylindrical package shape.
2N2222ACSM by Tt Electronics Plc

2N2222ACSM

Tt Electronics Plc

2N2222ACSM by Tt Electronics Plc is a NPN BJT transistor with hFE of 30, Vce of 50V, and fT of 300MHz. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. Suitable for surface mount designs with small outline package style.
BC847B by Changzhou Galaxy Century Microelectronics

BC847B

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
BC547BTF by Fairchild Semiconductor

BC547BTF

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846A,215 by NXP Semiconductors

BC846A,215

NXP Semiconductors

BC846A,215 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and a min DC current gain of 110 (hFE). With a max operating temperature of 150°C, it is suitable for small outline surface mount packages.
BC817-40 by Surge Components

BC817-40

Surge Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;
SMMBT4401LT1G by Onsemi

SMMBT4401LT1G

Onsemi

SMMBT4401LT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150°C, it meets AEC-Q101 standards for automotive use.
2N3904TFR by Onsemi

2N3904TFR

Onsemi

2N3904TFR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Operates in temp range -55 to 150°C, with turn on time of 70ns and turn off time of 250ns.
BC846B by Nexperia

BC846B

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
MMBT2222ALT1 by Leshan Radio

MMBT2222ALT1

Leshan Radio

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N2907A by Baneasa S A

2N2907A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Terminal Position: BOTTOM;
2N3904 by Zetex Plc

2N3904

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Promax-johnton

MMBT2222A

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY; Maximum Turn Off Time (toff): 285 ns;
JANTX2N2222A by Semicoa

JANTX2N2222A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847C by Kodenshi Auk

BC847C

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BC817-40,235 by NXP Semiconductors

BC817-40,235

NXP Semiconductors

NXP Semiconductors' BC817-40,235 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.
BC847C by Good-ark Electronics

BC847C

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC856BLT1G by Onsemi

BC856BLT1G

Onsemi

BC856BLT1G by Onsemi is a PNP BJT with 3 terminals, operating at temperatures from -55 to 150°C. It has a max collector-emitter voltage of 65V and max collector current of 0.1A. With a transition frequency of 100MHz, it's ideal for small signal applications in electronics requiring high DC current gain.