ZXTP2014ZQTA by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZXTP2014ZQTA
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 3 A;
Datasheet	ZXTP2014ZQTA Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	120 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	2.1 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	45
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	140 V
Maximum Collector-Base Capacitance:	33 pF
Reference Standard:	AEC-Q101; IATF 16949; MIL-STD-202
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.33 V

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