Diodes Incorporated - ZXTP56060FDBQ-13R

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ZXTP56060FDBQ-13R by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXTP56060FDBQ-13R
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.47 W; Maximum Collector Current (IC): 2 A; Reference Standard: AEC-Q101;
Datasheet ZXTP56060FDBQ-13R Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.47 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 60 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum VCEsat: .45 V
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