Fairchild Semiconductor - 2N4125BU

  1. Home
  2. Fairchild Semiconductor - 2N4125BU
2N4125BU by Fairchild Semiconductor

Image shown is a representation only.

Manufacturer Fairchild Semiconductor
Manufacturer's Part Number 2N4125BU
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;
Datasheet 2N4125BU Datasheet
In Stock431
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .2 A
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: 2N4125-NDR
2N4125
JEDEC-95 Code: TO-92
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 25
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
431 - -

Popular Products

Category Top Products

BC817-25,235 by Nexperia

BC817-25,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum VCEsat: .7 V;
BC817-40 by Changzhou Galaxy Century Microelectronics

BC817-40

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 45 V;
MMBT2907A by Micro Commercial Components

MMBT2907A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Finish: TIN LEAD;
2N2219A by New England Semiconductor

2N2219A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N3904 by Jiangsu Changjiang Electronics Technology

2N3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
BC847C by Dc Components

BC847C

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
2N2905A by General Diode

2N2905A

General Diode

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-40W,135 by Nexperia

BC817-40W,135

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
BC846-B by Samsung

BC846-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
MMBT3904 by Changzhou Galaxy Century Microelectronics

MMBT3904

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BC817-25 by Itt Semiconductor

BC817-25

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Terminal Form: GULL WING; Maximum Collector-Emitter Voltage: 45 V;
2N2907A by Electronic Transistors

2N2907A

Electronic Transistors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2222A by Tt Electronics Plc

2N2222A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
BC547ATA by Onsemi

BC547ATA

Onsemi

BC547ATA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.1A, ideal for switching applications. With a min DC current gain of 110 and max power dissipation of 0.625W, it operates at up to 150°C making it suitable for various electronic circuits in different industries. The package style is cylindrical with matte tin finish and through-hole terminals.
2N2222A by Solid State Devices

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222A by Micro Electronics

2N2222A

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547B by Weitronic Enterprise

BC547B

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
2N2219A by International Devices

2N2219A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2905A by New Jersey Semiconductor Products

2N2905A

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;