Fairchild Semiconductor - 93L412PC

  1. Home
  2. Fairchild Semiconductor - 93L412PC
93L412PC by Fairchild Semiconductor

Image shown is a representation only.

Manufacturer Fairchild Semiconductor
Manufacturer's Part Number 93L412PC
Description STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIP; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 2A;
Datasheet 93L412PC Datasheet
In Stock569
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 256X4
Output Characteristics: OPEN-COLLECTOR
Sub-Category: SRAMs
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 22
No. of Words: 256 words
Terminal Position: DUAL
Package Style (Meter): IN-LINE
Technology: TTL
JESD-30 Code: R-PDIP-T22
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 70 Cel
Package Code: DIP
Moisture Sensitivity Level (MSL): 2A
Memory Density: 1024 bit
Memory IC Type: STANDARD SRAM
JESD-609 Code: e0
Minimum Operating Temperature: 0 Cel
Memory Width: 4
Qualification: Not Qualified
Package Equivalence Code: DIP22,.4
Maximum Access Time: 60 ns
No. of Words Code: 256
Nominal Supply Voltage / Vsup (V): 5
Parallel or Serial: PARALLEL
Terminal Pitch: 2.54 mm
Temperature Grade: COMMERCIAL
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
569 - -

Popular Products

Category Top Products

71V416S15PHGI8 by Renesas Electronics

71V416S15PHGI8

Renesas Electronics

Renesas Electronics' 71V416S15PHGI8 is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, common I/O type, and 3-STATE output for industrial applications requiring fast access time of 15ns in a small outline package.
7005L20JGI8 by Renesas Electronics

7005L20JGI8

Renesas Electronics

The Renesas Electronics 7005L20JGI8 is a dual-port SRAM with an organization of 8Kx8 and a memory density of 65536 bit. It operates asynchronously with a max access time of 20 ns and can be used in industrial applications requiring high-speed data storage.
CY7C1441KV33-133AXM by Cypress Semiconductor

CY7C1441KV33-133AXM

Cypress Semiconductor

CY7C1441KV33-133AXM by Cypress Semiconductor is a 1MX36 CACHE SRAM with synchronous operation and a supply voltage of 3.3V. It is used in military-grade applications, has a max operating temperature of 125°C, and offers fast access time of 6.5 ns.
R1LV3216RSA-5SI#B0 by Renesas Electronics

R1LV3216RSA-5SI#B0

Renesas Electronics

Renesas Electronics' R1LV3216RSA-5SI#B0 is a 2MX16 SRAM with a memory density of 33554432 bit. It operates asynchronously at a max access time of 55 ns and has a small outline, thin profile package style. It is commonly used in industrial applications requiring fast and reliable data storage.
IS61LV5128AL-10TLI by Integrated Silicon Solution

IS61LV5128AL-10TLI

Integrated Silicon Solution

IS61LV5128AL-10TLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 10ns and is ideal for industrial applications requiring fast and reliable memory storage. The package style is small outline, thin profile, making it suitable for space-constrained designs.
IS61WV102416BLL-10TLI-TR by Integrated Silicon Solution

IS61WV102416BLL-10TLI-TR

Integrated Silicon Solution

SRAMs; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 10; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
CY7C1049GN30-10VXI by Cypress Semiconductor

CY7C1049GN30-10VXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 36; Package Code: SOJ; Package Shape: RECTANGULAR; Width: 10.16 mm;
CY7C1049G30-10VXIT by Infineon Technologies

CY7C1049G30-10VXIT

Infineon Technologies

CY7C1049G30-10VXIT by Infineon is a 512Kx8 SRAM with 10ns access time, operating at 3V. It features a small outline package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 4Mbit, it offers high performance in a compact form factor.
IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.
5962-8685920YA by Pyramid Semiconductor

5962-8685920YA

Pyramid Semiconductor

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 22; Package Code: DIP; Package Shape: RECTANGULAR; No. of Words Code: 16K;
7130LA100CB by Renesas Electronics

7130LA100CB

Renesas Electronics

Renesas Electronics' 7130LA100CB is a MIL-PRF-38535 screened SRAM with 1KX8 organization, operating at 5V. It features a max operating temperature of 125°C, asynchronous mode, and common I/O type. Ideal for military applications requiring fast access times and low standby current.
IDT71V424S10PHGI8 by Integrated Device Technology

IDT71V424S10PHGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;
71016S15YGI8 by Integrated Device Technology

71016S15YGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOJ; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;
CY7C1041G30-10ZSXI by Cypress Semiconductor

CY7C1041G30-10ZSXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;
IDT71V67803S133PFGI8 by Renesas Electronics

IDT71V67803S133PFGI8

Renesas Electronics

The Renesas Electronics IDT71V67803S133PFGI8 is a 512Kx18 CACHE SRAM with synchronous operation at 133 MHz clock frequency. It has a low profile flatpack package, operates at industrial temperature grade, and features 3-STATE output characteristics. Ideal for applications requiring fast access times and high memory density.
IS61WV25616EDBLL-10TLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-10TLI-TR

Integrated Silicon Solution

STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
CY62167EV30LL-45BVI by Infineon Technologies

CY62167EV30LL-45BVI

Infineon Technologies

Infineon's CY62167EV30LL-45BVI is a 1MX16 SRAM with 3.6V max supply voltage, 45ns access time, and 1048576 words capacity. It operates in industrial temperatures and features a very thin profile grid array package for common asynchronous applications.
CY14E101J2-SXIT by Infineon Technologies

CY14E101J2-SXIT

Infineon Technologies

Infineon's CY14E101J2-SXIT is a 128Kx8 non-volatile SRAM with 1048576-bit memory density. Operating at 5V, it features synchronous mode and Gull Wing terminals on a small outline package. Ideal for industrial applications requiring reliable data storage in harsh environments.
IS66WVS2M8BLL-104KLI by Integrated Silicon Solution

IS66WVS2M8BLL-104KLI

Integrated Silicon Solution

IS66WVS2M8BLL-104KLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates in industrial temperature range. Ideal for applications requiring fast, reliable data storage in compact electronic devices.
CY7C1059DV33-10ZSXIT by Infineon Technologies

CY7C1059DV33-10ZSXIT

Infineon Technologies

Infineon's CY7C1059DV33-10ZSXIT is a 3.3V SRAM with 1MX8 organization, 10ns access time, and 8388608-bit memory density. It operates in industrial temperatures and features a small outline package for space-constrained applications. Ideal for high-speed parallel data processing needs.