Fairchild Semiconductor - FDC6321C

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FDC6321C by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDC6321C
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Transistor Application: SWITCHING; Terminal Position: DUAL;
Datasheet FDC6321C Datasheet
In Stock47,159
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .00068 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .45 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 9 pF
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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