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Manufacturer | Fairchild Semiconductor |
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Manufacturer's Part Number | FDD4243 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; |
Datasheet | FDD4243 Datasheet |
In Stock | 8,276 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 6.7 A |
Maximum Pulsed Drain Current (IDM): | 60 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 42 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-XSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .064 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 84 mJ |
JEDEC-95 Code: | TO-252 |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 40 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 14 A |
Peak Reflow Temperature (C): | 260 |