Fairchild Semiconductor - FDD4685TF-SB82135

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FDD4685TF-SB82135 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDD4685TF-SB82135
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; No. of Terminals: 2; Maximum Turn Off Time (toff): 81 ns;
Datasheet FDD4685TF-SB82135 Datasheet
In Stock20
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 43 ns
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 100 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 83 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 81 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .027 ohm
Maximum Feedback Capacitance (Crss): 205 pF
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 40 A
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