Fairchild Semiconductor - FDN357N_NL

FDN357N_NL by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDN357N_NL
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Application: SWITCHING; Terminal Form: GULL WING;
Datasheet FDN357N_NL Datasheet
In Stock967
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.9 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .06 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 1.9 A
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