Image shown is a representation only.
| Manufacturer | Fairchild Semiconductor |
|---|---|
| Manufacturer's Part Number | FDWS86368_F085 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (ID): 80 A; Maximum Turn On Time (ton): 60 ns; |
| Datasheet | FDWS86368_F085 Datasheet |
| In Stock | 2,002 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 60 ns |
| Maximum Drain Current (ID): | 80 A |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 214 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 59 ns |
| JESD-30 Code: | R-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0045 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 82 mJ |
| Other Names: |
FDWS86368_F085TR FDWS86368-F085CT FDWS86368_F085 FDWS86368-F085DKR FDWS86368-F085TR FDWS86368_F085CT-ND FDWS86368_F085DKR-ND FDWS86368_F085TR-ND FDWS86368_F085CT FDWS86368_F085DKR |
| Maximum Feedback Capacitance (Crss): | 20 pF |
| JEDEC-95 Code: | MO-240AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 80 V |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 80 A |
| Peak Reflow Temperature (C): | 260 |
