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Manufacturer | Fairchild Semiconductor |
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Manufacturer's Part Number | FGH40N60SFDTU_F085 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1; |
Datasheet | FGH40N60SFDTU_F085 Datasheet |
In Stock | 1,267 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 80 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
Nominal Turn Off Time (toff): | 192 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 290 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 60 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Fall Time (tf): | 54 ns |
JEDEC-95 Code: | TO-247AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Maximum Collector-Emitter Voltage: | 600 V |
Additional Features: | RC-IGBT |
Maximum Gate-Emitter Voltage: | 20 V |
Reference Standard: | AEC-Q101 |
Maximum VCEsat: | 2.9 V |