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Manufacturer | Fairchild Semiconductor |
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Manufacturer's Part Number | FMG1G200US60L |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 200 A; Case Connection: ISOLATED; |
Datasheet | FMG1G200US60L Datasheet |
In Stock | 2 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 200 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | MOTOR CONTROL |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 410 ns |
No. of Terminals: | 7 |
Maximum Power Dissipation (Abs): | 695 W |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 330 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X7 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Polarity or Channel Type: | N-CHANNEL |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Maximum Gate-Emitter Voltage: | 20 V |
Reference Standard: | UL RECOGNIZED |
Maximum VCEsat: | 2.7 V |