Fairchild Semiconductor - FQA36P15_F109

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FQA36P15_F109 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FQA36P15_F109
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 294 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .09 ohm;
Datasheet FQA36P15_F109 Datasheet
In Stock609
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 36 A
Maximum Pulsed Drain Current (IDM): 144 A
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 294 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .09 ohm
Avalanche Energy Rating (EAS): 1400 mJ
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Additional Features: FAST SWITCHING
Maximum Drain Current (Abs) (ID): 36 A
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