Fairchild Semiconductor - FQD2N60CTM_WS

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FQD2N60CTM_WS by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FQD2N60CTM_WS
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
Datasheet FQD2N60CTM_WS Datasheet
In Stock3,691
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.9 A
Maximum Pulsed Drain Current (IDM): 7.6 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 4.7 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 120 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 600 V
Peak Reflow Temperature (C): 260
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