
Image shown is a representation only.
Manufacturer | Fairchild Semiconductor |
---|---|
Manufacturer's Part Number | IRF9530 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | IRF9530 Datasheet |
In Stock | 1,985 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 12 A |
Maximum Pulsed Drain Current (IDM): | 48 A |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 75 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .3 ohm |
Avalanche Energy Rating (EAS): | 500 mJ |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 12 A |