BAV199T by Formosa Microsemi | Diodes

Image shown is a representation only.

Manufacturer	Formosa Microsemi
Manufacturer's Part Number	BAV199T
Description	RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	BAV199T Datasheet
In Stock	802

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Forward Voltage (VF):	1.25 V
Config:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	.16 A
Surface Mount:	YES
Maximum Reverse Current:	.005 uA
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
No. of Phases:	1
Reverse Test Voltage:	75 V
Maximum Repetitive Peak Reverse Voltage:	85 V
Maximum Non Repetitive Peak Forward Current:	1 A
Diode Element Material:	SILICON
Maximum Power Dissipation:	.25 W
Additional Features:	LOW LEAKAGE CURRENT
Reference Standard:	IEC-134
Application:	GENERAL PURPOSE
Maximum Reverse Recovery Time:	3 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
802	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;

OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.

CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.