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| Manufacturer | Freescale Semiconductor |
|---|---|
| Manufacturer's Part Number | MRFE6VP5150GNR1 |
| Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER; No. of Elements: 2; |
| Datasheet | MRFE6VP5150GNR1 Datasheet |
| In Stock | 2,512 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
935320449528 MRFE6VP5150GNR1TR MRFE6VP5150GNR1DKR MRFE6VP5150GNR1CT |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | COMMON SOURCE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| JEDEC-95 Code: | TO-270BB |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 133 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PDFM-G4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 3 |









