Fuji Electric - 2MBI1000VXB-170E-50

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2MBI1000VXB-170E-50 by Fuji Electric

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Manufacturer Fuji Electric
Manufacturer's Part Number 2MBI1000VXB-170E-50
Description Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 1400 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum VCEsat: 2.55 V; Maximum Collector-Emitter Voltage: 1700 V;
Datasheet 2MBI1000VXB-170E-50 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 1400 A
Maximum Collector-Emitter Voltage: 1700 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.55 V
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