Fujitsu Semiconductor America - FSX017LG

CE3512K2-C1 by California Eastern Laboratories is an N-CHANNEL FET for AMPLIFIER applications. Features include 12.5 dB Power Gain, 3 V DS Breakdown Voltage, and X BAND frequency band. It has a SQUARE package with FLAT terminals in MICROWAVE style.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY;

BF244ARLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 4;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 7 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 25 V; Maximum Operating Temperature: 150 Cel;

Onsemi 2N5486RLRP is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 0.31 W, operates in DEPLETION MODE at up to 150 °C, and features a JUNCTION technology with SILICON material.

3N212 by Texas Instruments is a N-CHANNEL FET with 27V DS Breakdown Voltage, suitable for AMPLIFIER applications. Operating in DUAL GATE mode, it offers 0.05A Drain Current and 0.36W Power Dissipation. Ideal for VERY HIGH FREQUENCY BAND circuits due to its METAL-OXIDE SEMICONDUCTOR technology.

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4; Transistor Element Material: SILICON;

Broadcom's ATF-36163-BLKG is an N-channel RF FET with a 3V DS breakdown voltage, 9.4 dB power gain, and operates in depletion mode. Ideal for amplifier applications in the Ku band, it features a small outline package with Gull Wing terminals and high electron mobility technology. With a max operating temperature of 150°C and 0.18W power dissipation, this transistor offers reliable performance in various RF signal processing systems.

BF556C-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.