Fujitsu - FHX35LG/002

2N5247 by Texas Instruments is a N-CHANNEL FET with 10 dB Gp, operating in DEPLETION MODE. It's used as an AMPLIFIER in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36 W and Crss of 1 pF, it's ideal for RF applications.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .015 A; Minimum Power Gain (Gp): 12 dB;

BF909AWR,115 by NXP Semiconductors is an N-CHANNEL RF FET with PLASTIC/EPOXY package. It operates in ULTRA HIGH FREQ BAND for AMPLIFIER applications. Features include DUAL GATE, ENHANCEMENT MODE, 7V DS Breakdown Voltage, and 0.04A Max Drain Current.

ATF-531P8-BLK by Broadcom is an N-channel RF FET transistor with a min DS breakdown voltage of 7V. It has a power gain of 18.5 dB and is commonly used as an amplifier in C band applications.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Terminal Position: DUAL; Terminal Finish: TIN;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Additional Features: LOW NOISE; Minimum DS Breakdown Voltage: 7 V;

BF909WR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 7V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

ATF-55143-TR1G by Broadcom is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a max drain current of 0.1 A, operating at up to 150°C with a power dissipation of 0.27 W in a small outline package suitable for surface mount assembly.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Additional Features: LOW NOISE; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Qualification: Not Qualified; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; No. of Terminals: 4; Qualification: Not Qualified;

Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;

BF245BRLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Feedback Capacitance (Crss): .8 pF; Transistor Element Material: SILICON;