FHX35LG by Fujitsu | Transistors

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Manufacturer	Fujitsu
Manufacturer's Part Number	FHX35LG
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
Datasheet	FHX35LG Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	8.5 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Sub-Category:	FET RF Small Signal
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	4 V
Qualification:	Not Qualified
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-CRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Additional Features:	HIGH RELIABILITY
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	175 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	.29 W

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