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| Manufacturer | Fujitsu |
|---|---|
| Manufacturer's Part Number | FLC103WG |
| Description | N-CHANNEL; Maximum Drain Current (ID): .4 A; Maximum Power Dissipation Ambient: 7.5 W; Maximum Drain Current (Abs) (ID): .4 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; |
| Datasheet | FLC103WG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Maximum Drain Current (ID): | .4 A |
| Maximum Drain Current (Abs) (ID): | .4 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Power Dissipation Ambient: | 7.5 W |









