1N6451 by General Semiconductor | Diodes

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Manufacturer	General Semiconductor
Manufacturer's Part Number	1N6451
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet	1N6451 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Transient Suppressors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Maximum Non Repetitive Peak Reverse Power Dissipation:	600 W
Technology:	AVALANCHE
JESD-30 Code:	O-PALF-W2
Minimum Breakdown Voltage:	267 V
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Polarity:	UNIDIRECTIONAL
Case Connection:	ISOLATED
Maximum Breakdown Voltage:	326 V
Maximum Repetitive Peak Reverse Voltage:	240 V
Maximum Clamping Voltage:	440 V
JESD-609 Code:	e0
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	267 V
Maximum Power Dissipation:	5 W

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