General Semiconductor - SM8S30A2D

SM8S30A2D by General Semiconductor

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Manufacturer General Semiconductor
Manufacturer's Part Number SM8S30A2D
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: SINGLE; Terminal Form: C BEND; No. of Terminals: 1; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet SM8S30A2D Datasheet
In Stock640
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Config: SINGLE
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category: Transient Suppressors
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 1
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 5200 W
Technology: AVALANCHE
JESD-30 Code: R-PSSO-C1
Minimum Breakdown Voltage: 33.3 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Polarity: UNIDIRECTIONAL
Case Connection: ANODE
Maximum Breakdown Voltage: 36.8 V
Maximum Repetitive Peak Reverse Voltage: 30 V
Maximum Clamping Voltage: 48.4 V
JEDEC-95 Code: DO-218AB
JESD-609 Code: e0
Diode Element Material: SILICON
Qualification: Not Qualified
Nominal Breakdown Voltage: 35.05 V
Maximum Power Dissipation: 8 W
Additional Features: PATENTED DEVICE
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