Hamamatsu Photonics Kk - S5106

  1. Home
  2. Hamamatsu Photonics Kk - S5106
S5106 by Hamamatsu Photonics Kk

Image shown is a representation only.

Manufacturer Hamamatsu Photonics Kk
Manufacturer's Part Number S5106
Description PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 5 nA; Maximum Operating Temperature: 100 Cel; Nominal Light Current: .027 mA; Peak Wavelength (nm): 960;
Datasheet S5106 Datasheet
NAME DESCRIPTION
Maximum Dark Current: 5 nA
Shape: SQUARE
Configuration: SINGLE
Size: 5 mm
Sub-Category: Photo Diodes
Minimum Reverse Breakdown Voltage: 30 V
Minimum Operating Temperature: -40 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PIN PHOTODIODE
Nominal Light Current: .027 mA
Peak Wavelength (nm): 960
Additional Features: HIGH SENSITIVITY
Maximum Operating Temperature: 100 Cel
Maximum Reverse Voltage: 30 V
Semiconductor Material: Silicon
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NDL5100P by Renesas Electronics

NDL5100P

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000008 s; Maximum Dark Current: 500 nA; Minimum Operating Temperature: -40 Cel;
BPW34S by Siemens

BPW34S

Siemens

PIN PHOTODIODE; Nominal Light Current: .05 mA; No. of Functions: 1; Configuration: SINGLE; Shape: RECTANGULAR; Maximum Dark Current: 30 nA;
MICROFJ-SMTPA-30035-GEVB by Onsemi

MICROFJ-SMTPA-30035-GEVB

Onsemi

AVALANCHE PHOTODIODE;
MICROFC-SMA-30020-GEVB by Onsemi

MICROFC-SMA-30020-GEVB

Onsemi

AVALANCHE PHOTODIODE;
BP104FS by Siemens

BP104FS

Siemens

PIN PHOTODIODE; No. of Functions: 1; Shape: RECTANGULAR; Nominal Light Current: .025 mA; Maximum Dark Current: 30 nA; Configuration: SINGLE;
MICROFJ-30020-TSV-TR1 by Onsemi

MICROFJ-30020-TSV-TR1

Onsemi

MICROFJ-30020-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in temperature-controlled environments.
QSE773E3R0 by Onsemi

QSE773E3R0

Onsemi

QSE773E3R0 by Onsemi is a single PIN photodiode with peak wavelength of 920nm. It operates b/w -40 to 85°C, has a reverse breakdown voltage of 32V, and response time of 0.00000005s. Ideal for IR applications due to its rectangular shape and through hole mounting feature.
SRD00214C by Infineon Technologies

SRD00214C

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 20 V; Maximum Response Time: .0000000000003 s; Semiconductor Material: InGaAs;
BPW34 by Temic Semiconductors

BPW34

Temic Semiconductors

PIN PHOTODIODE; No. of Functions: 1; Minimum Reverse Breakdown Voltage: 60 V; Shape: SQUARE; Size: 3 mm; Maximum Dark Current: 30 nA;
BPV10 by Vishay Intertechnology

BPV10

Vishay Intertechnology

Vishay Intertechnology's BPV10 is a 5mm PIN photodiode with peak wavelength of 920nm. It operates b/w -40°C to 100°C, with reverse breakdown voltage of 60V. Ideal for IR applications, it has fast response time of 0.0000000025s and low dark current of 5nA.
MICROFJ-SMTPA-30035-GEVBPK by Onsemi

MICROFJ-SMTPA-30035-GEVBPK

Onsemi

MICROFJ-SMTPA-30035-GEVBPK by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 3000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
HP-3F by Kodenshi Auk

HP-3F

Kodenshi Auk

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 10 nA;
S1223-01 by Hamamatsu Photonics Kk

S1223-01

Hamamatsu Photonics Kk

The Hamamatsu Photonics Kk S1223-01 is a single PIN photodiode with a peak wavelength of 960 nm. It operates in temperatures ranging from -40 to 100°C and has a fast response time of 0.00000001 s. Ideal for applications requiring precise light detection in the infrared range, it features a square shape and through-hole mounting.
OD-8465 by Renesas Electronics

OD-8465

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 5 nA; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000000001 s;
OPR5911 by Tt Electronics Plc

OPR5911

Tt Electronics Plc

AVALANCHE PHOTODIODE;
TEMD5080X01 by Vishay Intertechnology

TEMD5080X01

Vishay Intertechnology

The Vishay Intertechnology TEMD5080X01 is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -40°C to 110°C, with reverse breakdown voltage of 25V. Ideal for infrared applications, it has nominal light current of 0.05mA and max dark current of 10nA.
MICROFJ-40035-TSV by Onsemi

MICROFJ-40035-TSV

Onsemi

AVALANCHE PHOTODIODE;
MICROFJ-30035-TSV-TR by Onsemi

MICROFJ-30035-TSV-TR

Onsemi

MICROFJ-30035-TSV-TR by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a reverse breakdown voltage of 24.2V, and dark current of 3000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
OP913SL by Optotek

OP913SL

Optotek

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .12 mA; Minimum Reverse Breakdown Voltage: 32 V; Configuration: SINGLE; Size: 8.13 mm;
BPW34FASR by Osram Opto Semiconductors

BPW34FASR

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FASR is a single PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with min reverse breakdown voltage of 16V. Ideal for infrared applications, it has nominal light current of 0.04mA and max dark current of 30nA.