Hittite Microwave - HMC451LP3ETR

  1. Home
  2. Hittite Microwave - HMC451LP3ETR
HMC451LP3ETR by Hittite Microwave

Image shown is a representation only.

Manufacturer Hittite Microwave
Manufacturer's Part Number HMC451LP3ETR
Description WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz; Gain: 12.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
Datasheet HMC451LP3ETR Datasheet
In Stock100
NAME DESCRIPTION
Other Names: 505-HMC451LP3ETR
-2735-HMC451LP3ETRDKR
1127-1045-6
505-HMC451LP3ETRDKR
1127-1045-2
505-HMC451LP3ETRCT
1127-1045-1
1127-1045-1-ND
1127-1045-2-ND
-2735-HMC451LP3ETRCT
1127-1045-6-ND
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 5000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 18000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -40 Cel
Gain: 12.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
100 - -

Popular Products

Category Top Products

HMC565LC5 by Analog Devices

HMC565LC5

Analog Devices

Analog Devices' HMC565LC5 is a wide band low power RF amplifier with 16 dB gain and 50 ohm impedance. Operating from 6-20 GHz, it handles up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in compact designs.
HMC342LC4TR by Hittite Microwave

HMC342LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;
HMC752LC4 by Hittite Microwave

HMC752LC4

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 28000 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e4; Maximum Input Power (CW): -5 dBm; Maximum Operating Temperature: 85 Cel;
HMC659LC5 by Hittite Microwave

HMC659LC5

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
LT5524EFE#PBF by Linear Technology

LT5524EFE#PBF

Linear Technology

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;
HMC506LP4TR by Analog Devices

HMC506LP4TR

Analog Devices

NARROW BAND LOW POWER;
HMC606LC5 by Hittite Microwave

HMC606LC5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
ERA-5SM+ by Mini-circuits

ERA-5SM+

Mini-circuits

ERA-5SM+ by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, 50 ohm impedance, and 1.3 VSWR. It operates from 0 to 4000 MHz, handles up to 13 dBm input power, and has a compact surface mount package ideal for RF applications requiring amplification in the -45°C to 85°C temperature range.
XP1044-QL-0N00 by M/a-com Technology Solutions

XP1044-QL-0N00

M/a-com Technology Solutions

XP1044-QL-0N00 by M/a-com Technology Solutions is a RF & Microwave Amplifier with 16.5 dB Gain, 23 dBm Max Input Power (CW), and operates b/w 3500-6000 MHz. Ideal for narrow band medium power applications due to its COMPONENT construction and Matte Tin (Sn) terminal finish.
ECG008B-G by Qorvo

ECG008B-G

Qorvo

Qorvo's ECG008B-G is a wide band medium power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 15 dBm CW input power. Ideal for applications requiring high performance in RF & microwave systems.
TQP7M9102-PCB900 by Qorvo

TQP7M9102-PCB900

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
SPF-5122Z by Qorvo

SPF-5122Z

Qorvo

Qorvo's SPF-5122Z is a GAAS RF amplifier with 11.2dB gain, operating from 50MHz to 4GHz. It has a max input power of 27dBm and operates on a 5V supply, ideal for wideband medium-power applications in RF & microwave systems.
TQP7M9105 by Triquint Semiconductor

TQP7M9105

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1500 MHz; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 50 MHz;
ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.
XP1039-QJ-0G0T by M/a-com Technology Solutions

XP1039-QJ-0G0T

M/a-com Technology Solutions

XP1039-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15.5 dB gain, operating from 5600 MHz to 7100 MHz. It can handle up to 25 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
TQP7M9103 by Qorvo

TQP7M9103

Qorvo

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.
HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.
QPA9121TR7 by Qorvo

QPA9121TR7

Qorvo

Qorvo's QPA9121TR7 is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact PLASTIC/EPOXY package and surface mount feature, it's ideal for RF & Microwave systems requiring high performance in temperatures ranging from -40 to 105°C.
MGA-545P8-TR1 by Agilent Technologies

MGA-545P8-TR1

Agilent Technologies

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10.5 dB;
HMC499 by Hittite Microwave

HMC499

Hittite Microwave

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Gain: 12 dB; Minimum Operating Frequency: 21000 MHz;