HYNIX - IMSOURCING - HMAA4GU6AJR8N-XN

HMAA4GU6AJR8N-XN by HYNIX - IMSOURCING

Image shown is a representation only.

Manufacturer	HYNIX - IMSOURCING
Manufacturer's Part Number	HMAA4GU6AJR8N-XN
Description	HYNIX - IMSOURCING; Product Type: RAM Module; Memory Size: 32 GB; Memory Technology: DDR4 SDRAM; Device Supported: Desktop PC; Form Factor: DIMM;

HMAA4GU6AJR8N-XN Technical Details

NAME	DESCRIPTION
Brand Name:	HYNIX - IMSOURCING
Form Factor:	DIMM
Memory Technology:	DDR4 SDRAM
Memory Size:	32 GB
Product Type:	RAM Module
Product Name:	32GB DDR4 SDRAM Memory Module
Number of Pins:	288-pin
Memory Speed:	3200 MHz
Device Supported:	Desktop PC
Signal Processing:	Unbuffered
Memory Standard:	DDR4-3200/PC4-25600

Popular Products

1N4148

Semitron

RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;

1N4148WT

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LM317T

Motorola

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;

BSS138W-7-F

Multicomp Pro

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

CRCW06031K00FKEAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.

SS14

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS138-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;