Ik Semicon - ILN2003AN

  1. Home
  2. Ik Semicon - ILN2003AN
ILN2003AN by Ik Semicon

Image shown is a representation only.

Manufacturer Ik Semicon
Manufacturer's Part Number ILN2003AN
Description NPN; Configuration: COMPLEX; Surface Mount: NO; JESD-30 Code: R-PDIP-T16; Terminal Position: DUAL; Package Style (Meter): IN-LINE;
Datasheet ILN2003AN Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 16
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T16
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP42A by Bourns

TIP42A

Bourns

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15;
MJE15034G by Onsemi

MJE15034G

Onsemi

MJE15034G by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.
NJVMJD340T4G-VF01 by Onsemi

NJVMJD340T4G-VF01

Onsemi

NJVMJD340T4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 30, VCEO of 300V, and IC of 0.5A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high operating temperature range from -65 to 150°C.
BD679AS by Onsemi

BD679AS

Onsemi

The Onsemi BD679AS is a NPN Darlington BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for switching applications, it operates up to 150°C and has a max collector current of 4A. Its package style is flange mount with matte tin finish in a rectangular shape.
TIP41C by Rectron

TIP41C

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BDX53C by Motorola

BDX53C

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Additional Features: LEADFORM OPTIONS ARE AVAILABLE; Maximum Collector-Base Capacitance: 300 pF;
D44H11 by STMicroelectronics

D44H11

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP35C by Power Innovations

TIP35C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Position: SINGLE; Qualification: Not Qualified;
TIP47 by SPC TECHNOLOGY/ MULTICOMP

TIP47

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP127 by Changzhou Galaxy Century Microelectronics

TIP127

Changzhou Galaxy Century Microelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;
TIP127 by Weitron Technology

TIP127

Weitron Technology

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
D44H11 by National Semiconductor

D44H11

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP3055 by STMicroelectronics

TIP3055

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
BUX87 by New Jersey Semiconductor Products

BUX87

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 450 V; No. of Elements: 1;
TIP112 by Baneasa S A

TIP112

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
TIP122 by Rectron

TIP122

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
NJVMJD31CT4G by Onsemi

NJVMJD31CT4G

Onsemi

NJVMJD31CT4G by Onsemi is a NPN BJT with 100V VCEO, 3A IC, and 15W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and -65 to 150°C operating range. Suitable for surface mount designs with GULL WING terminals in a small outline package.
JANTXV2N3055 by Aeroflex/metelics

JANTXV2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: O-MBFM-P2; No. of Elements: 1;
ULN2804A by Onsemi

ULN2804A

Onsemi

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; JESD-30 Code: R-PDIP-T18;
BDX53C by STMicroelectronics

BDX53C

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;