Infineon Technologies - 29MT050XH

29MT050XH by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 29MT050XH
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 800 W; Terminal Form: PIN/PEG; Transistor Application: SWITCHING;
Datasheet 29MT050XH Datasheet
In Stock396
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 46 A
Maximum Pulsed Drain Current (IDM): 180 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 12
Maximum Power Dissipation (Abs): 800 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-P12
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Avalanche Energy Rating (EAS): 920 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 46 A
Peak Reflow Temperature (C): 260
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