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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | 29MT050XH |
Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 800 W; Terminal Form: PIN/PEG; Transistor Application: SWITCHING; |
Datasheet | 29MT050XH Datasheet |
In Stock | 396 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 46 A |
Maximum Pulsed Drain Current (IDM): | 180 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
No. of Terminals: | 12 |
Maximum Power Dissipation (Abs): | 800 W |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-P12 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | PIN/PEG |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Avalanche Energy Rating (EAS): | 920 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 500 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 46 A |
Peak Reflow Temperature (C): | 260 |