Infineon Technologies - 2N7618M1

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2N7618M1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 2N7618M1
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;
Datasheet 2N7618M1 Datasheet
In Stock179
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.07 A
JEDEC-95 Code: MO-036AB
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 14
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-CDIP-T14
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 1.07 A
Moisture Sensitivity Level (MSL): 1
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