Infineon Technologies - 2N7633M2

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2N7633M2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 2N7633M2
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
Datasheet 2N7633M2 Datasheet
In Stock873
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .8 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 14
Maximum Power Dissipation (Abs): .6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-F14
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .6 ohm
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .8 A
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