Infineon Technologies - 2N7635M1

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2N7635M1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 2N7635M1
Description N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Drain Current (ID): 1.07 A; Maximum Drain Current (Abs) (ID): 1.07 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 2N7635M1 Datasheet
In Stock241
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.07 A
Maximum Drain Current (Abs) (ID): 1.07 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
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