5962R1821501VXF by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	5962R1821501VXF
Description	QDR II SRAM; No. of Terminals: 165; Package Code: CGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; Nominal Supply Voltage / Vsup (V): 1.8;
Datasheet	5962R1821501VXF Datasheet
In Stock	139

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Standby Current:	.39 Amp
Organization:	4MX36
Maximum Seated Height:	5.38 mm
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
Maximum Supply Current:	1080 mA
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	165
Total Dose (V):	200k Rad(Si)
Maximum Clock Frequency (fCLK):	250 MHz
No. of Words:	4194304 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
Screening Level:	MIL-PRF-38535 Class V
Technology:	CMOS
JESD-30 Code:	R-CBGA-X165
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Package Code:	CGA
Width:	21 mm
Moisture Sensitivity Level (MSL):	1
Input/Output Type:	COMMON
Memory Density:	150994944 bit
Minimum Standby Voltage:	1.7 V
Memory IC Type:	QDR II SRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Memory Width:	36
Output Enable:	NO
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	CGA165,11X15,50
Length:	25 mm
No. of Words Code:	4M
Nominal Supply Voltage / Vsup (V):	1.8
Parallel or Serial:	PARALLEL
Terminal Pitch:	1.27 mm
Maximum Supply Voltage (Vsup):	1.9 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
139	-	-

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;