ARE2805S by Infineon Technologies | Other Function Semiconductors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	ARE2805S
Description	DC-DC REGULATED POWER SUPPLY MODULE; Temperature Grade: MILITARY; No. of Terminals: 9; Package Shape: SQUARE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel;
Datasheet	ARE2805S Datasheet
In Stock	254

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Line Regulation:	.5 %
Nominal Output Voltage:	5 V
Control Mode:	VOLTAGE-MODE
Trim or Adjustable Output (V):	YES
Protection(s):	OVER LOAD; SHORT CIRCUIT
Width (mm):	27.305 mm
Maximum Seated Height:	7.874 mm
Maximum Output Current:	1 A
Maximum Total Power Output:	5 W
Surface Mount:	YES
No. of Outputs:	1
No. of Terminals:	9
Total Dose (V):	150k Rad(Si)
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Maximum Load Regulation:	.5 %
Technology:	HYBRID
JESD-30 Code:	R-XDMA-G9
Package Shape:	SQUARE
Terminal Form:	GULL WING
Maximum Operating Temperature:	125 Cel
Height:	7.874 mm
Minimum Output Voltage:	4.95 V
Maximum Switching Frequency:	450 kHz
Minimum Input Voltage:	18 V
Maximum Input Voltage:	50 V
Maximum Output Voltage:	5.05 V
Minimum Operating Temperature:	-55 Cel
No. of Functions:	1
Nominal Input Voltage:	28 V
Other IC type:	DC-DC REGULATED POWER SUPPLY MODULE
Length:	27.305 mm
Main Out Ripple Voltage:	.017675 Vrms
Main Output Efficiency:	75 %
Temperature Grade:	MILITARY

Pricing (USD)

Qty.	Unit Price	Ext. Price
254	-	-

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;

Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);