Infineon Technologies - AUIRF1324S-7P

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AUIRF1324S-7P by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRF1324S-7P
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Terminal Finish: MATTE TIN OVER NICKEL;
Datasheet AUIRF1324S-7P Datasheet
In Stock294
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 240 A
Maximum Pulsed Drain Current (IDM): 1640 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
No. of Terminals: 6
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .001 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 230 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 24 V
Qualification: Not Qualified
Additional Features: ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID): 240 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
294 $2.400 $705.600

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