Infineon Technologies - AUIRF7478Q

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AUIRF7478Q by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRF7478Q
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet AUIRF7478Q Datasheet
In Stock499
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.5 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 7 A
Maximum Drain Current (Abs) (ID): 7 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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