Infineon Technologies - AUIRFR5305TRL

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AUIRFR5305TRL by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRFR5305TRL
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JEDEC-95 Code: TO-252AA; Package Style (Meter): SMALL OUTLINE;
Datasheet AUIRFR5305TRL Datasheet
In Stock44,379
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 31 A
Maximum Pulsed Drain Current (IDM): 110 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .065 ohm
Avalanche Energy Rating (EAS): 280 mJ
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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