Infineon Technologies - AUIRGB4062D1

  1. Home
  2. Infineon Technologies - AUIRGB4062D1
AUIRGB4062D1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRGB4062D1
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 246 W; Maximum Collector Current (IC): 59 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet AUIRGB4062D1 Datasheet
In Stock1,288
NAME DESCRIPTION
Maximum Collector Current (IC): 59 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Rise Time (tr): 41 ns
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 246 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Fall Time (tf): 40 ns
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,288 - -

Popular Products

Category Top Products

FGD3040G2-F085 by Onsemi

FGD3040G2-F085

Onsemi

FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.
APT100GN60LDQ4G by Microchip Technology

APT100GN60LDQ4G

Microchip Technology

Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.
HGTD3N60C3S9A by Fairchild Semiconductor

HGTD3N60C3S9A

Fairchild Semiconductor

Fairchild Semiconductor's HGTD3N60C3S9A is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 6A max collector current. It has a turn-off time of 455ns, turn-on time of 15ns, and fall time of 275ns. Ideal for motor control applications due to its high power dissipation capability of 33W in a small outline package style.
IRG4BC40KPBF by International Rectifier

IRG4BC40KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 42 A; Package Shape: RECTANGULAR;
FB30R06W1E3BOMA1 by Infineon Technologies

FB30R06W1E3BOMA1

Infineon Technologies

Infineon Technologies' FB30R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector-emitter voltage of 600V, and max. collector current of 39A. It has a nominal turn-off time of 245ns and turn-on time of 42ns, suitable for applications requiring high power switching like motor drives and inverters at up to 175°C operating temperature.
IRG7PH42UD2PBF by Infineon Technologies

IRG7PH42UD2PBF

Infineon Technologies

IRG7PH42UD2PBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It is designed for power control applications and has a max power dissipation of 321W.
FGA25N120ANTDTU by Fairchild Semiconductor

FGA25N120ANTDTU

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 25 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Voltage: 20 V;
CM600DY-24A by Powerex

CM600DY-24A

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
STGW25M120DF3 by STMicroelectronics

STGW25M120DF3

STMicroelectronics

STGW25M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with 375W power dissipation, 1200V collector-emitter voltage, and 50A collector current. It operates up to 175°C and has a gate-emitter threshold voltage of 7V. Ideal for high-power applications in industrial electronics.
FS25R12W1T4BOMA1 by Infineon Technologies

FS25R12W1T4BOMA1

Infineon Technologies

FS25R12W1T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 505ns, making it ideal for power control applications. With a max collector current of 45A and operating temperature of up to 175°C, this IGBT is designed for high-power industrial systems.
IXGT30N120B3D1 by IXYS Corporation

IXGT30N120B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Package Body Material: PLASTIC/EPOXY;
IRG4BC30FPBF by International Rectifier

IRG4BC30FPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
IKD06N60RAATMA2 by Infineon Technologies

IKD06N60RAATMA2

Infineon Technologies

IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
AUIRG4BC30SSTRL by International Rectifier

AUIRG4BC30SSTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;
IKW50N60TAFKSA1 by Infineon Technologies

IKW50N60TAFKSA1

Infineon Technologies

IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.
SKIIP36NAB126V10 by Semikron International

SKIIP36NAB126V10

Semikron International

Semikron International's SKIIP36NAB126V10 is an N-CHANNEL IGBT with 1200V VCEsat, 88A IC, and 480ns toff. Ideal for POWER CONTROL applications, it operates b/w -40°C to 150°C. This RECTANGULAR package has 29 terminals and complies with IEC-60747-1; UL standards.
IRG7PH42U-EP by International Rectifier

IRG7PH42U-EP

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Terminal Finish: MATTE TIN OVER NICKEL;
FS50R07W1E3B11ABOMA1 by Infineon Technologies

FS50R07W1E3B11ABOMA1

Infineon Technologies

Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
IRG4BC40WLPBF by Infineon Technologies

IRG4BC40WLPBF

Infineon Technologies

IRG4BC40WLPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 294ns and turn-on time of 48ns, it offers efficient performance in high-power systems.
FGH50N6S2D by Fairchild Semiconductor

FGH50N6S2D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified;