Infineon Technologies - AUIRGR4045D

AUIRGR4045D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRGR4045D
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSSO-G2;
Datasheet AUIRGR4045D Datasheet
In Stock68
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 12 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 15 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
Nominal Turn Off Time (toff): 127 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 77 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 38 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 22 ns
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
68 $1.190 $80.920

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