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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BAR6402ELE6327XTMA1 |
| Description | PIN DIODE; Surface Mount: YES; Diode Element Material: SILICON; Diode Resistive Test Frequency: 100 MHz; Moisture Sensitivity Level (MSL): 1; Minimum Breakdown Voltage: 150 V; |
| Datasheet | BAR6402ELE6327XTMA1 Datasheet |
| In Stock | 394 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
2156-BAR6402ELE6327XTMA1 BAR6402ELE6327XTMA1DKR INFINFBAR6402ELE6327XTMA1 SP001114996 BAR6402ELE6327XTMA1TR BAR6402ELE6327XTMA1CT |
| Diode Resistive Test Frequency: | 100 MHz |
| Nominal Minority Carrier Lifetime: | 1.55 us |
| Reverse Test Voltage: | 0 V |
| Diode Type: | PIN DIODE |
| Diode Resistive Test Current: | 1 mA |
| Sub-Category: | PIN Diodes |
| Surface Mount: | YES |
| Terminal Finish: | GOLD |
| JESD-609 Code: | e4 |
| Nominal Diode Capacitance: | .13 pF |
| Diode Element Material: | SILICON |
| Technology: | POSITIVE-INTRINSIC-NEGATIVE |
| Minimum Breakdown Voltage: | 150 V |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Diode Forward Resistance: | 20 ohm |
| Moisture Sensitivity Level (MSL): | 1 |









