Infineon Technologies - BAR6404E6327HTSA1

BAR6404E6327HTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer	Infineon Technologies
Manufacturer's Part Number	BAR6404E6327HTSA1
Description	PIN DIODE; Terminal Finish: TIN; Technology: POSITIVE-INTRINSIC-NEGATIVE; Diode Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
Datasheet	BAR6404E6327HTSA1 Datasheet
In Stock	471,563

BAR6404E6327HTSA1 Technical Details

NAME	DESCRIPTION
Diode Element Material:	SILICON
Other Names:	BAR6404E6327XT BAR6404E6327BTSA1 BAR 64-04 E6327CT-ND BAR6404E6327HTSA1CT BAR 64-04 E6327TR-ND BAR 64-04 E6327DKR-ND BAR6404E6327 SP000012211 2156-BAR6404E6327HTSA1 BAR6404E6327HTSA1TR BAR 64-04 E6327CT BAR 64-04 E6327 BAR6404E6327HTSA1DKR BAR 64-04 E6327-ND IFEINFBAR6404E6327HTSA1 BAR 64-04 E6327DKR
Technology:	POSITIVE-INTRINSIC-NEGATIVE
Diode Type:	PIN DIODE
Terminal Finish:	TIN
JESD-609 Code:	e3
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
471,563	-	-

Popular Products

OPA2277UA

Burr-Brown Corporation

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

CRG0805F10K

Tyco Electronics Components

FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;

AMS1117-3.3

Advanced Monolithic Systems

AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.

LM7805CT

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;

BSS138BKW,115

NXP Semiconductors

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

1N4148

Dc Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N4148

Multicomp Pro

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

2N7002

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

BAV99

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Category Top Products