Infineon Technologies - BAR90-081LS

NXP Semiconductors' BAP50-03,135 is a PIN diode with 50V breakdown voltage and 40 ohm forward resistance. Ideal for RF applications, it operates up to 150°C, has 0.55 pF capacitance, and can withstand peak reflow at 260°C for 30s.

BAP64-05W,115 by NXP Semiconductors is a PIN diode with common cathode configuration and 2 elements. It operates in the S band frequency range and has a max diode capacitance of 0.35 pF. This diode is commonly used in attenuator and switching applications due to its high power dissipation of 0.24 W and low forward resistance of 40 ohm.

PIN DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Infineon's BAR6304WH6327XTSA1 is a PIN diode with 2 elements, 0.3 pF capacitance, and 2 ohm forward resistance. It operates in S band for switching applications at up to 150°C. The diode features a positive-intrinsic-negative technology, Gull Wing terminals, and a breakdown voltage of 50V.

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Broadcom's HSMP-386C-TR1 is a PIN diode with 2 elements, 3 terminals, and a breakdown voltage of 50V. It is used in attenuators and switching applications due to its positive-intrinsic-negative technology. The diode has a nominal minority carrier lifetime of 0.5us and features a small outline package style for surface mount applications.

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ROHM's RN242CST2RA is a PIN diode with 1V reverse test voltage, 0.35pF capacitance, and 30V breakdown voltage. Ideal for RF switches in applications requiring high frequency operation up to 100MHz and low forward resistance of 3 ohm at temperatures up to 150°C.

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

MPN3404RL1 by Onsemi is a PIN diode with a max power dissipation of 0.4W and very high frequency band for switching applications. It has a diode capacitance of 2pF, forward resistance of 0.85 ohm, and breakdown voltage of 20V, making it suitable for high-frequency switching circuits. The diode element material is silicon with a positive-intrinsic-negative technology in a cylindrical package style.

PIN DIODE; Surface Mount: YES; Nominal Diode Capacitance: .25 pF; Reverse Test Voltage: 0 V; Moisture Sensitivity Level (MSL): 1; Nominal Minority Carrier Lifetime: .5 us;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Finish: TIN; Technology: POSITIVE-INTRINSIC-NEGATIVE; Diode Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;