Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BAT15-03WE6327XT |
| Description | MIXER DIODE; Maximum Power Dissipation: .1 W; Diode Element Material: SILICON; Frequency Band: X BAND; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
| Datasheet | BAT15-03WE6327XT Datasheet |
| In Stock | 769 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Maximum Forward Voltage (VF): | .41 V |
| Diode Type: | MIXER DIODE |
| Frequency Band: | X BAND |
| Maximum Output Current: | .11 A |
| Minimum Operating Temperature: | -55 Cel |
| Diode Element Material: | SILICON |
| Maximum Diode Capacitance: | .35 pF |
| Technology: | SCHOTTKY |
| Schottky Barrier Type: | LOW BARRIER |
| Minimum Breakdown Voltage: | 4 V |
| Maximum Power Dissipation: | .1 W |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









