Infineon Technologies - BAT15099E6433HTMA1

TGD0683SSMX by Texas Instruments is a single Schottky mixer diode with gallium arsenide element. It operates in very high frequency to millimeter wave band, suitable for surface mount applications. The package is ceramic-metal sealed co-fired, round shape with isolated case connection.

NSR15ADXV6T1 by Onsemi is a Schottky mixer diode with 2 elements, suitable for medium frequency applications. It has a max forward voltage of 0.68 V and operates in temperatures ranging from -65 to 150 °C. This surface-mount diode has a package style of small outline and is ideal for microwave mixing and detection tasks.

1N5712-AZ1 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. It is designed for very high frequency to ultra high frequency applications, featuring a glass package and isolated case connection. With a max power dissipation of 0.43 W, it is suitable for microwave circuits requiring high-frequency signal detection.

BA591 by NXP Semiconductors is a single microwave mixer diode with a very high frequency band. It features a max diode capacitance of 1.05 pF and operates in temperatures ranging from -65°C to 150°C. This small outline diode is ideal for applications requiring high-frequency signal mixing and detection.

Skyworks Solutions SMS7630-517 is a microwave mixer & detector diode with Schottky technology. It operates in X band, has 2 separate elements, and a max forward voltage of 0.24V. Ideal for applications requiring high-frequency signal mixing and detection in a compact chip carrier package.

MSS20-141-B10D by M/a-com Tech: Schottky mixer diode for KA band, 40 GHz freq, max. power dissipation of 0.1W. Ceramic-metal package ideal for microwave apps with temp range -65 to 150°C. Surface mountable with dual terminals and zero barrier Schottky element material.

TMMBAT19 by STMicroelectronics is a single-config microwave mixer diode with ultra high frequency band. It features a max forward voltage of 1V, operating temperature range from -65 to 125 °C, and Schottky technology. Ideal for applications requiring high-speed signal mixing in isolated case connections.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Texas Instruments MDX655 is a surface-mount microwave mixer diode with a frequency range of 25-40 GHz. It has an impedance range of 50-200 ohm and operates up to 100°C. Ideal for high-frequency applications requiring gallium arsenide diode technology.

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum Forward Voltage (VF): .44 V;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1502LSE6433XTMA1 by Infineon Technologies is a single Schottky mixer diode with low barrier Schottky technology. It operates in X Band frequency range, has a max forward voltage of 0.41V, and can handle a max output current of 0.11A. This chip carrier package diode is suitable for microwave applications requiring high-speed mixing and detection capabilities at temperatures ranging from -55 to 150°C.

1N5712-B2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications due to its isolated case connection and 0.43 W power dissipation capability in a glass package.

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Broadcom's HSMS-2852#T30 is a Schottky mixer diode with 2 elements, suitable for ultra-high frequency to C band applications. It features a plastic/epoxy package, tin terminal finish, and can handle up to 0.15W of pulsed input power at a max operating temperature of 150°C. Ideal for surface mount designs in microwave systems.

BAT29 by STMicroelectronics is a Schottky mixer diode designed for ultra-high frequency applications. It features a max reverse current of 0.05 µA, a max operating temp of 125 °C, and a low capacitance of 1 pF. Ideal for microwave mixing and detection tasks.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

Onsemi's SBL-221 is a surface mount mixer diode with GaAs element. Operating freq range 20-40 GHz, temp up to 150 °C. Ideal for microwave applications requiring high frequency mixing and detection.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

CA3019 by Onsemi is a COMPLEX microwave mixer & detector diode with 10 terminals. It features 6 SILICON diode elements and a max power dissipation of 0.12 W. Ideal for RF applications, radar systems, and signal processing due to its high-performance MIXER DIODE technology.