Infineon Technologies - BB545E7904HTSA1

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF;

The Onsemi SVC342 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 503 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 16 V and is designed with a COMMON CATHODE configuration for optimal performance.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

1N5702 by Onsemi is a varactor diode with 375 min quality factor, 22 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

Varactors;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

The NXP 934042930135 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact surface mount design ensures efficient space utilization in circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Nominal Diode Capacitance: 52 pF;

The Onsemi SVC321SPAC is a single varactor diode with a min quality factor of 200 and a max reverse current of 0.1 uA. It has a package style of in-line and is ideal for applications requiring variable capacitance diodes, such as RF tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

The Onsemi SVC364 is a varactor diode with 2 elements, common cathode config, and 52 pF nominal capacitance. It has a min breakdown voltage of 16 V and is ideal for RF applications requiring variable capacitance diodes in small outline packages.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

The Onsemi SVC321C is a Varactor Diode with a Min Quality Factor of 200, Max Reverse Current of 0.1uA, and Min Breakdown Voltage of 16V. It is ideal for applications requiring variable capacitance diodes in electronic circuits operating up to 100 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Maximum Time At Peak Reflow Temperature (s): 30; Diode Element Material: SILICON; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH;