Infineon Technologies - BB640E6433

TIV307 by Texas Instruments is a Varactor Diode with 200 min Quality Factor, 9 pF Nominal Capacitance, and 20 V Breakdown Voltage. Ideal for RF applications due to its Variable Capacitance nature and 0.25 W Power Dissipation capability in an Axial package style.

The Onsemi MV1650 is a single varactor diode with glass package, ideal for applications requiring variable capacitance. With a nominal capacitance of 100pF and min breakdown voltage of 20V, it operates b/w -65 °C to 200°C. Its isolated case connection and wire terminal form make it suitable for diverse electronic circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 32 V; Nominal Diode Capacitance: 14.95 pF;

MMBV109L by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications in small outline packages, suitable for surface mount configurations at temperatures up to 125 °C.

NXP Semiconductors' BB201,215 is a varactor diode with 95pF capacitance and 15V peak reverse voltage. Commonly used in RF applications due to its variable capacitance feature, it operates b/w -55°C to 125°C. This small outline diode has a gull wing terminal form and is surface mountable for easy integration.

MMBV2107LT1 by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this diode offers precise tuning capabilities for RF circuits.

TIV24 by Texas Instruments is a single varactor diode with a min quality factor of 80, ideal for very high frequency applications. Featuring a nominal capacitance of 28 pF and max power dissipation of 0.25 W, it offers a breakdown voltage of 30 V. The diode's silicon element material and variable capacitance make it suitable for RF tuning circuits in communication systems.

MC209RLRP by Onsemi is a single varactor diode with 29pF capacitance, 30V breakdown voltage, and 200 min quality factor. Ideal for very high frequency applications due to its 0.2W power dissipation and silicon element material. Package style is cylindrical with tin lead finish.

The Onsemi SVC321D is a single varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C, making it suitable for RF tuning circuits.

BB149A,115 by NXP Semiconductors is a varactor diode with a capacitance of 19.74 pF and breakdown voltage of 30 V. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as tuning circuits in RF communication systems. The diode comes in a small outline package with gull wing terminals, making it ideal for surface mount designs.

BB208-03,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 3.7 and a max reverse voltage of 10V. It operates b/w -55°C to 125°C, has a nominal capacitance of 10.1pF, and is designed for applications requiring variable capacitance diodes in small outline packages.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5698 by Onsemi is a Varactor Diode with 10pF nominal capacitance, 65V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

MV2105RLRM by Onsemi is a Varactor Diode with a Min Quality Factor of 400, Nominal Capacitance of 15pF, and Breakdown Voltage of 30V. It is used in RF applications for tuning circuits due to its Variable Capacitance property and operates at a Max Temperature of 150 °C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 15 pF; Maximum Repetitive Peak Reverse Voltage: 15 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 20;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;