Infineon Technologies - BB659C02VH7912XT

BB659C02VH7912XT by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BB659C02VH7912XT
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet BB659C02VH7912XT Datasheet
In Stock456
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Config: SINGLE
Diode Type: VARIABLE CAPACITANCE DIODE
Frequency Band: VERY HIGH FREQUENCY
Diode Cap Tolerance: 7.01 %
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
Nominal Diode Capacitance: 39 pF
Diode Element Material: SILICON
No. of Terminals: 2
Minimum Diode Capacitance Ratio: 9.5
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F2
Minimum Breakdown Voltage: 35 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
456 - -

Popular Products

Category Top Products