Infineon Technologies - BB664-02V-H7902

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

The Toshiba 1SV204 is a single varactor diode with a max reverse current of 0.01 uA and min breakdown voltage of 30 V. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. The diode's silicon element material and flat terminal form enhance its performance up to an operating temperature of 125 °C.

MVAM109 by Motorola is a single varactor diode with hyperabrupt capacitance classification. It has a min quality factor of 150, nominal capacitance of 460 pF, and operates b/w -55 to 125 °C. Ideal for applications requiring variable capacitance in electronic circuits.

SVD302 by Onsemi is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. With a max operating temperature of 150 °C, it offers a nominal capacitance of 15 pF and min breakdown voltage of 27 V. This surface-mount diode in microwave package style has a max power dissipation of 0.5 W, making it suitable for high-frequency circuit designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 200; Nominal Diode Capacitance: 64 pF; Maximum Repetitive Peak Reverse Voltage: 33 V;

BBY40TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning circuits, it offers reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N4794 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.005uA and high breakdown voltage of 22V.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 45;