Infineon Technologies - BB814E6433

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV809LT1 by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in RF circuits. With hyperabrupt variable capacitance classification, this diode offers precise tuning capabilities for high-frequency designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 12 V; Nominal Diode Capacitance: .9 pF; Minimum Quality Factor: 200;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SMV2019-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 0.8 pF capacitance, 22 V breakdown voltage, and 500 min quality factor. Ideal for RF applications due to its small outline package and high capacitance ratio. Surface mount design with matte tin finish makes it suitable for compact electronic devices.

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

BBY39TRL by NXP Semiconductors is a surface-mount varactor diode featuring a dual-element configuration with a min capacitance ratio of 8. It comes in a small outline package made of plastic/epoxy, ideal for RF tuning applications. This silicon-based diode offers reliable performance in compact designs.

The Onsemi 1N4800 is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.000000005 uA, and Nominal Diode Capacitance of 100 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

MV104RLRM by Onsemi is a Varactor Diode with 39.5pF capacitance, 32V breakdown voltage, and 100 min quality factor. Commonly used in RF applications due to its variable capacitance feature and high-quality factor for signal tuning. Package style is cylindrical with a max operating temperature of 125 °C.

BB640E6327HTSA1 by Infineon Technologies is a varactor diode with a min capacitance ratio of 19.5, ideal for frequency tuning applications. It features a small outline package shape, gull wing terminal form, and dual terminals for surface mount configurations. The diode element material is silicon with tin terminal finish in a plastic/epoxy body material.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 1.8 pF; Minimum Quality Factor: 3000;

BBY42TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and voltage-controlled oscillators, it offers reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV109LT3 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations. With a max power dissipation of 0.2 W, this variable capacitance diode offers precise tuning capabilities in RF circuits.

MMVL2101T1G by Onsemi is a varactor diode with 6.8pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for RF applications due to its variable capacitance property and small outline package style. Suitable for surface mount designs requiring high-frequency tuning capabilities.

BB150115 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 30 V. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.