Infineon Technologies - BBY51-07

  1. Home
  2. Infineon Technologies - BBY51-07
BBY51-07 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY51-07
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet BBY51-07 Datasheet
In Stock358
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Variable Capacitance Diode Classification: HYPERABRUPT
Config: SEPARATE, 2 ELEMENTS
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 7 V
Diode Cap Tolerance: 11.11 %
Sub-Category: Varactors
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Nominal Diode Capacitance: 5.3 pF
Diode Element Material: SILICON
No. of Terminals: 4
Minimum Diode Capacitance Ratio: 1.55
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
Minimum Breakdown Voltage: 7 V
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
358 - -

Popular Products

Category Top Products

SMV2023-011LF by Skyworks Solutions

SMV2023-011LF

Skyworks Solutions

SMV2023-011LF by Skyworks Solutions is a single hyperabrupt varactor diode with 4.9 pF capacitance, 22 V breakdown voltage, and 500 min quality factor. It's used in RF applications for frequency tuning due to its small outline package and high capacitance ratio.
MV1401 by Msi Electronics

MV1401

Msi Electronics

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1SV285(TPH3,F) by Toshiba

1SV285(TPH3,F)

Toshiba

The Toshiba 1SV285(TPH3,F) is a Varactor Diode with 4.5 pF capacitance, 10 V peak reverse voltage, and abrupt classification. It is a surface-mount diode in small outline package suitable for RF tuning applications.
MMBV809LT1G by Onsemi

MMBV809LT1G

Onsemi

MMBV809LT1G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75 and nominal capacitance of 5.3 pF. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.
1N4806 by Onsemi

1N4806

Onsemi

1N4806 by Onsemi is a Varactor Diode with 18pF capacitance, 99V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.
LV2209RLRM by Onsemi

LV2209RLRM

Onsemi

LV2209RLRM by Onsemi is a varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic devices. With a breakdown voltage of 25V and power dissipation of 0.28W, it offers reliable performance in signal modulation circuits.
BB207 by NXP Semiconductors

BB207

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
934040040115 by NXP Semiconductors

934040040115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX592N by Texas Instruments

MDX592N

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .45 pF; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V;
SVC342K by Onsemi

SVC342K

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Nominal Diode Capacitance: 439 pF; Maximum Repetitive Peak Reverse Voltage: 16 V;
SVC321SPA by Onsemi

SVC321SPA

Onsemi

The Onsemi SVC321SPA is a single variable capacitance diode with a min quality factor of 200 and nominal capacitance of 388.1 pF. It operates at a max temperature of 100 °C, making it suitable for applications requiring precise tuning in RF circuits. The diode's through-hole terminal form and silicon element material ensure reliable performance in various electronic devices.
SVC346 by Onsemi

SVC346

Onsemi

The Onsemi SVC346 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 64 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 33 V and is designed for variable capacitance needs.
BB178T/R by NXP Semiconductors

BB178T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934042240115 by NXP Semiconductors

934042240115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV1206-079LF by Skyworks Solutions

SMV1206-079LF

Skyworks Solutions

SMV1206-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 11.6pF capacitance, 22V breakdown voltage, and -55 to 125°C operating range. Ideal for RF applications in small outline packages requiring variable capacitance control.
1N4795 by Onsemi

1N4795

Onsemi

1N4795 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 22V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.005uA.
1N4809 by Onsemi

1N4809

Onsemi

1N4809 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 60V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor of 15 and low max reverse current of 0.005uA.
BB147,115 by NXP Semiconductors

BB147,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934051270115 by NXP Semiconductors

934051270115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1S553T-HP by Onsemi

1S553T-HP

Onsemi

Varactors;